◎Necessity：
　It is conditions absolutely not to do that there is no adhesion of dirt, not to produce stress, crack, and damage on the occasion of conveyance of the wafer in a manufacturing process and handling.
　Moreover, since it is operated in a clean room, contamination of the environment by discharge of dust and winding up is not being. 、、
◎Technical explanation of the clean room correspondence Bernouilli Chuck for a clean room"FLOATCHUCK TypeWA-SiC"



























　　　　　　　　　　　
1.Exhaust recovery Mechanism：Bernoulli Chuck[FLOAT CHUCK Type WA-ＳｉＣ] for SiC & Sapphire wafer for the clean- room correspondence prepares a hood in the perimeter of the operation side which counters the wafer to hold, the cushion room established in the central part of the operation side, and the nozzle and operation side which were established in the cushion room central part, and is constituted.
The high-speed air which blew off from the nozzle flows into the space of an operation face and a wafer 　The negative pressure generating by the ejector effect produced in a cushion room increases, and negative generating is performed efficiently. 　　　　　　　　　　　
　It is supplemented with the discharge air which passed through the gap of an operation side and a wafer with the hood which surround the circumference, it is attracted from an exhaust port, and is discharged by the predetermined place. Therefore, it is rare for a high-speed air jet to flow in in a clean room, and discharge of garbage and dust do not wind up

◎ The conventional technology 　
In order that the hand similar to Bernouilli Chuck holding a wafer in the state of non-contacting by jetting gas might discharge gas indoors, there was a problem in use in a clean room.
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　　　　　　　　　　　　　　　Type of FLOAT CHUCK

Type of FLOAT CHUCK	ΦＤ　mm	ｈ　mm	ＳｉＣ & SapphireWafer
ＷＡSｉＣ−１Ｃ	65	21.5	４ in
ＷＡSｉＣ−２Ｃ	100	21.5	5〜６　in
ＷＡSｉＣ−３Ｃ	120	21.5>	８　in
ＷＡSｉＣ−４Ｃ	180	21.5	１２　in

◎Adaptation
　・Sapphire Wafer
　・ＳｉＣ Wafer（SiC)
　・Si Wafer（Si)
　・Sic substrate
　・GaAs Wafer